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-100mA / -50V Digital transistor (with built-in resistors)
DTA125TUA / DTA125TKA
Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3)Only the on / off conditions need to be set for operation, making the device design easy. 4)Higher mounting densities can be achieved. Structure PNP epitaxial planar silicon transistor (Resistor built-in type) Packaging specifications
Package Packaging type Code Part No. Basic ordering unit (pieces) DTA125TUA DTA125TKA UMT3 SMT3 Taping Taping T146 T106 3000 3000 - -
Dimensions (Unit : mm)
DTA125TUA
2.0 0.3
(3)
0.9 0.2 0.7
1.25
(2) (1)
2.1
0.65 0.65
ROHM : UMT3 EIAJ : SC-70
1.3
0.15
0.1Min.
(1) Emitter (2) Base (3) Collector
Abbreviated symbol : 9A
Each lead has same dimensions
DTA125TKA
2.9 0.4
(3)
1.1 0.8
(2)
(1)
1.6 2.8
0.95 0.95 0.15 1.9
0.3Min.
ROHM : SMT3 EIAJ : SC-59
(1) Emitter (2) Base (3) Collector
Abbreviated symbol : 9A
Each lead has same dimensions
Inner circuit
B
R1
C E
E : Emitter C : Collector B : Base
R1=200k
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c 2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.C
DTA125TUA / DTA125TKA
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits -50 -50 -5 -100 200 150 -55 to +150 Unit V V V mA mW C C
Data Sheet
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. -50 -50 -5 - - - 100 140 - Typ. - - - - - - 250 200 250 Max. - - - -0.5 -0.5 -0.3 600 260 - Unit V V V A A V - k MHz IC= -50A IC= -1mA IE= -50A VCB= -50V VEB= -4V IC= -0.5mA , IB= -0.05mA IC= -1mA , VCE= -5V - VCE= -10V , IE=5mA , f=100MHz Conditions
Transition frequency
Characteristics of built-in transistor
Electrical characteristic curves
1k 500
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=5V
1 500m 200m 100m 50m
Ta=100C
Ta=25C
IC/IB=10/1
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1 10 20 50 100 200 500 1m 2m 5m 10m
Ta= -40C
Ta=100C
Ta=25C
Ta= -40C
20m 10m 5m 2m 1m 10 20 50 100 200 500 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. Collector current
Fig.2 Collector-Emitter saturation voltage vs. Collector current
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c 2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.06 - Rev.C
Notice
Notes
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